http://www.aiplab.com/Proposal_of_Pinned_Photodiode_type_Solar_Cell_2020_09_28.html







10月18日(日)久しぶりに厚木市荻野運動公園、「あつぎこどもの森クラブ」の作業棟で

ハロウィーンのイベントが開催です。台風14号の影響で11日(日)から延期です。








Top Homepage of Ogino Junior High School in Atsugi-city


20.10 荻野中学校の10月の絵手紙




Back Numbers ....

20.01 20.02 20.03
,20.04 20.05 20.06

20.07 20.08 20.09 20.10 20.11 20.12

19.01 19.02 19.03 19.04
19.0519.06

19.07 19.08 19.09 19.10 19.10x 19.11 19.12

18.12 18.11 18.10 18.08 18.06 18.05 18.03 18.01 

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WAKA ( Japanese Short Poem )

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萩原良昭はこの歌集を教科書にして今和歌を学習中です(笑顔)。

     





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******
豆知識  <-- 萩原良昭が知らなかった言葉です(苦笑)。
******

岳樺(ダケカンバ)

木犀(もくせい)

曼珠沙華(マンジュシャゲ)

欅(ケヤキ)

凭れる(もたれる)

繁(しげ)

諍(いさか)う

言争(いいあらがう)

ひぐらし

ユキノシタ(雪の下)の花言葉とは?

切岸(きりぎし)とは?

莪 とは ?

蓼莪之詩 (りくがのし) とは ?

梢(こずえ) とは?

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●ハングルの勉強をしています
*************************************

http://www.aiplab.com/index_Page003_Enoy_Hungle.html

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***********************************************
What is AIPS ( Artificial Intelligent Partner System ) ?
***********************************************





Hagiwara at Sony invented Pinned Photodiode in 1975.


http://www.aiplab.com/Hagiwara_invented_PPD_and_Sony_HAD_in_1975.pdf


*****************************************************************
The Evidence that Hagiwara at Sony is the inventer of Pinned Photodiode is
given by the three 1975 Japanese Patent Applications , JPA 1975-127646,
JPA 1975-127647 and JPA 1975-134985. Details are explained below.

*****************************************************************






Hagiwara is also the inventor of the Global Shutter Function
needed in the modern CMOS Image Sensors. For the details,
please read the conference publication papers:

http://www.aiplab.com/P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf

http://www.aiplab.com/P2020_EDTM2020_PaperID_3C4_by_Hagiwara.pdf




Pinned Photodiode has an excellent short wave blue light sensitivity
that can be also applied to the Pinned Photodiode type Solar Cells.

http://www.aiplab.com/P2020_Pinned_Photodiode_Solar_Cell_1.pdf

http://www.aiplab.com/P2020_Pinned_Photodiode_Solar_Cell_2.pdf

************************************************************
Hagiwara at Sony invented Pinned Photodiode in 1975
index000_Invention_of_Pinned_Photodiode_in_1975.html
index001_Image_Sensor_1975_1977_and_2014_Patents.html
index002_Facts_on_Invention_of_Pinned_Photodiode.html
index003_Hagiwara_Publication_List.html
index004_My_Wonderful_Memory_Pictures.html
index005_Image_Sensor_Story_by_Hagiwara.html
index006_Slide_Sony_Atsugi_Tech_2020_07_10.html
*************************************************************






http://www.aiplab.com/Memo_2020_09_17_by_Yoshiaki_Hagiwara.html






















http://www.aiplab.com/JP1975-134985.pdf










Hinted by the base P+P sloped doping profile
of the Drift Field Transistor shown above,
Hagiwara at Sony in 1975 invented N+NP+Psub
and P+PNPNsub junction thyristor type
Dynamic Photo Transistors whch were later
called as Pinned Photodiode or Sony Hole
Accumukation Diode (HAD) with the vertical
overflow drain (VOD) function which was
needed to realize the mechanical-free
electrical shutter.

Hagiwara is now proposing a new solar cell
with the P+P Pinned Surface and with the
Completely Empty Buried N Well Potential
to realize very high efficiency solar cells.















Simple Pinned Photodiode Solar Cell Structure (1)

with the N well formation on the lightly doped P type substrate wafer.





Simple Pinned Photodiode Solar Cell Structure (1)

on the instrinsic substrate ( or super lihtly doped N type ) silicon wafer.




http://www.aiplab.com/P2020_Pinned_Photodiode_Solar_Cell_1.pdf

http://www.aiplab.com/P2020_Pinned_Photodiode_Solar_Cell_2.pdf





The Surface Barrier width W
B would be
about the debye length ( L debye )
of the P region of the doping level of Np.


If we have Np = 100 e / um+3 ,
we have the debye length

( L debye ) = sqrt (
εsi *kT/Np) = 0.4 um,

which is quilte a distance
since the short wave blue light
cannot penetrate the silicon surface
more than 0.2 um in depth.

If we have Np = 10000 e / um+3 ,
we still have the debye length

( L debye ) = sqrt (εsi *kT/Np) = 0.04 um,


http://www.aiplab.com/Surface_Barrier_Width.html

.













The P+PNP junction type Pinned Photodiode has
an excellent blue light sensitivey because of the
Gaussian P+P Surface Doping Profile D(x) .

A much wider Barrier Potential Width WB with
Surface Barrier Electric Field is formed for
photo electron and hole pair separations to
realize a high quantum efficiency solar cell.

For the following calculations, for the Gaussian
P+P Surface Doping Profile D(x), the surface
impurity doping concentration D(0) is defined
as D(0) = - Np - Npp.

The sysmetric P+PNPP+ junction type
Pinned PhotodiodeSolar Cell is formed
on the super lightly doped N-type silicon
substrate with the P-well (Np) formations
and the P+ (Npp) surface ion implantations.
Hence in this case the surface impurity
doping level is denoted as - ( Np + Npp ).


http://www.aiplab.com/Surface_Barrier_Width_3.html






http://www.aiplab.com/Pinned_Photodiode_Surface_Barrier_Potential.htmll



















index006_Slide_Sony_Atsugi_Tech_2020_07_10.html







http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide001_to_010.html






http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide011_to_020.html









http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide021_to_030.html







http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide031_to_040.html









http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide041_to_050.html







http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide051_to_060.html







http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide061_to_070.html






http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide071_to_080.html









http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide081_to_090.html








http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide091_to_100.html









http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide101_to_110.html







http://www.aiplab.com/Slide_Sony_Atsugi_Tech_2020_07_10_Slide111_to_119.html









index006_Slide_Sony_Atsugi_Tech_2020_07_10.html




●縦型 Overflow Drain ( VOD ) 機能付きで、かつ残像のない 、
P+NPNsub 接合型の Pinned Photodiode でないと、電子 shutter
機能は実現しません。この 1975 年の萩原のP+NPNsub 接合型の
Dynamic Photo Transistor の発明により、メカ Free の電子 shutter
機能付きのビデオカメラが実現しました。これにより、Film のない、
メカ
 Free の、電子映像の技術革新社会が実現したと思っています。 

http://www.aiplab.com/Memo_2020_08_21_by_Yoshiaki_Hagiwara.html

●Intel は、早々と大容量メモリ産業から脱却し、Intelligent Processor
の開発商品化に注力し、大企業に成長しました。これから Sonyも同様、
Intelligent Processor の開発商品化に注力してほしいです。日本の
もの造り産業のお家芸でもある、AI IoT Robitics の実現の為にも、
Multi Chipの3次元集積回路と その実装技術を武器に、日本の半導体
産業を支えてほしいです。世界をもリードして行ってほしいです。

http://www.aiplab.com/Memo_2020_08_23_by_Yoshiaki_Hagiwara.html


●川名さんと加藤さんのアイデアは特許出願されていませんが
日本の半導体産業を支えた基本特許のアイデアだったと思います。

残像のない、Pinned Photodiode を採用した電子 shutter 機能の発明
はFilm 社会から、メカ Freeの電子映像社会に変貌するための重要な
発明でした。その実現には、SONYの Bipolar Transistorの製造技術
が世界一であったからだと思います。 実はそこには創造性豊かな生産
技術者の工夫と Innovation がありました。そのアイデアを今度は 
Pinned Photodiode 型の 太陽電池の提案に生かして、高性能で安価
な、量子効率が高いシリコン太陽電池が製造できないかと思っています。


http://www.aiplab.com/Memo_2020_08_29_by_Yoshiaki_Hagiwara.html

http://www.aiplab.com/Memo_2020_09_17_by_Yoshiaki_Hagiwara.html


http://www.aiplab.com/Memo_2020_09_20_by_Yoshiaki_Hagiwara.html

http://www.aiplab.com/Proposal_of_Pinned_Photodiode_type_Solar_Cell_2020_09_28.html







"Micro-Electronics for Home Entertainment" Technical Digest of IEEE
ESSCIRC International Conference (ESSCIRC2001), Villach, Austria,September, 2001


http://www.aiplab.com/P2001_ESSCIRC2001.pdf







Yoshiaki Hagiwara wrote a book on
"the World of Artificial Intelligent Digital Circuits",
which is important and needed to built
the intelligent image sensor systems.

ISBM978-4-88359-339-2
Hard Cover, 460 page,
\ 9000 Japanese Yen + tax

If you are interestied in the book, Please visit

https://www.seizansha.co.jp/ISBN/ISBN978-4-88359-339-2.html

https://www.seizasha.co.jp/





Hagiwara at Sony invented Pinned Photodiode in 1975.


http://www.aiplab.com/Hagiwara_invented_PPD_and_Sony_HAD_in_1975.pdf


************************************************************
Hagiwara at Sony invented Pinned Photodiode in 1975
index000_Invention_of_Pinned_Photodiode_in_1975.html
index001_Image_Sensor_1975_1977_and_2014_Patents.html
index002_Facts_on_Invention_of_Pinned_Photodiode.html
index003_Hagiwara_Publication_List.html
index004_My_Wonderful_Memory_Pictures.html
index005_Image_Sensor_Story_by_Hagiwara.html
index006_Slide_Sony_Atsugi_Tech_2020_07_10.html
*************************************************************

http://www.aiplab.com/Proposal_of_Pinned_Photodiode_type_Solar_Cell_2020_09_28.html


http://www.aiplab.com/Memo_2020_09_20_by_Yoshiaki_Hagiwara.html
http://www.aiplab.com/Memo_2020_09_17_by_Yoshiaki_Hagiwara.html
http://www.aiplab.com/Memo_2020_08_29_by_Yoshiaki_Hagiwara.html
http://www.aiplab.com/Memo_2020_08_23_by_Yoshiaki_Hagiwara.html
http://www.aiplab.com/Memo_2020_08_21_by_Yoshiaki_Hagiwara.html

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********************************************************
hagiwara-yoshiaki@aiplab.com http://www.aiplab.com/

hagiwara@ssis.or.jp http://www.ssis.or.jp/en/index.html
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