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The AIPS image sensor watching at its inventor... English Version
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hagiwara-yoshiaki@aiplab.com ( http://www.aiplab.com/ )

hagiwara@ssis.or.jp ( http://www.ssis.or.jp/en/index.html )

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     Hagiwara Important Works


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Today's E_Tegami













Top Homepage of Ogino Junior High School in Atsugi-city

2020年3月の荻野中学校の絵手紙 

Monthly E_Tegami Posters (今までの記録です):


20.01 20.02 20.03

19.01 19.02 19.03 19.04
19.05 19.06

19.07 19.08 19.09 19.10 19.10x 19.11 19.12

18.12 18.11 18.10 18.08 18.06 18.05 18.03 18.01 
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http://www.aiplab.com/Study_Korean.html


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   萩原良昭の著書の紹介です。
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"the World of Artificial Intelligent Digital Circuits"




Yoshiaki Hagiwara wrote a book on "the World of Artificial Intelligent Digital Circuits",

which is important and needed to built the intelligent image sensor systems.

Please visit https://www.seizasha.co.jp/ if you are interestied in the book.

ISBM978-4-88359-339-2 ( Hard Cover, 460 page, 9000 Japanese Yen + tax )

https://www.seizansha.co.jp/ISBN/ISBN978-4-88359-339-2.html


Mail Order FORM : https://www.seizansha.co.jp/mailorder_eng.html







Introduction to the World of Artificial Intellignet Digital Circuits





Introduction to Special Relativity Theory for Middle School Students



Introduction to Elementary School Puzzle of Oil Pot Problem



萩原良昭の活動紹介です。




The official homepage of Society of Semiconductor Industry Specialists



Annual Semicondutor Tutorial Programs in Spring and Fall.



Introduction to the artificial intelligent electric eye, the smart image sensor

Lecture Memo on Semiconductor Quality Insurance

SSIS2019Fall.Hagiwara01.html


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Hagiwara Important Publication Works






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No Image Lag Feature
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No Image Lag Feature was explained in Hagiwara 1975 Patents.



Hagiwara at SONY reported in his SSDM 1978 paper the P+NP juntion type
Pinned Phtoodiode (PPD) where the P+ and P layers have the same potential.
SONY used this PPD in Frame Trandfer CCD image sensor in SSDM1978 paper.

The pinned surface potential also defines the pinned empty potential well
of the buried N diffuison region, which can stay empty always in case of
the frame transfer CCD image sensor cases.



Hagiwara at SONY reported in his SSDM 1978 paper the P+NP juntion type
Pinned Phtoodiode (PPD) where the P+ and P layers have the same potential.
SONY used this PPD in Frame Trandfer CCD image sensor in SSDM1978 paper.




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Blue Light Sensitivity
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The most important feature of the Pinned Photodiode
is the excellent short wave blue light sensitivity.



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Low Surface Dark Current
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Another important feature of the Pinned Photodiode
is the very low surface dark current feature.



The Pinned Photodiode was hinted by the SiO2 exposed Photo Sensor.



Sony developed the P+NPwellNsub structure and used it in interline transfer CCD
and named this PPD + VOD structure the SONY Hole Accumulation Diode (HAD).

PPD has the pinned surface potentail as well as the pinned empty potential well
of the complete charge transfer operation resulting the no image lag picture quality
for fast action pictures. Hagiwara invented Buried Photodiode, Pinned Photodiode
and SONY Hole Accumulation Diode (HAD).

The evidence are give in Japanese 1975-127647 and 1975-134985 patents and
Hagiwara SSDM1978 paper on the P+NP junction type Pinned Photodidoe (PPD)
used in Frame Trandfer CCD image sensor.

Hagiwara recently published in the IEEE 3DIC2019 conference held in Sendai, Japan,
also a paper on the three dimensional back light illuminated Pinned Phtotodiode.



Hagiwara was very much encouraged by the kind words shown below.



Hagiwara was very much encouraged by the kind words shown below.
















Hagiwara was on Japanese Television ( Fuji TV ) , March 2013 ,
explaining his vision on the future self-driving automatic car
controlled by with the artificial intelligent partner system (AIPS).




Hagiwara_Yoshiaki_CaltechDiploma_PhD1975.pdf













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The AIPS image sensor watching at its inventor, Yoshiaki Hagiwara.
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hagiwara-yoshiaki@aiplab.com ( http://www.aiplab.com/ )

hagiwara@ssis.or.jp ( http://www.ssis.or.jp/en/index.html )

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