19.01 19.02 19.03 19.04
19.05 19.06 19.07 19.08 

18.12 18.11 18.10 18.08 18.06 18.05 18.03 18.01 




A very deep knowledge with physics background is needed to understand
the small world of semiconductor device behaviors in solid image sensors.

A Brief History of Image Sensors


Image Sensor history is also one of the ungly Patent&Money Wars.

SONY was attacked by Fairchild, KODAK, and NEC in the past
on SONY HAD ( Hagiwara 1975 invention of the Pinned Photodiode).

SONY HAD is so important an invention that the war is not ended yet.

There are still small battles and attacks going on against SONY HAD
(Pinned Photodiode) invention. Hagiwara has to struggle to defend
his honor as the inventor of SONY HAD ( the Pinned Photodiode )..


CCD was originally invented as the counter part of the Magnetic Bubble
Memory Analog Shift Register. At the beginning, CCD was considered to be
useful for building a large scale DRAM chip. And the original CCD was not
invented to use as image sensors. However, the surface type CCD had a
very poor charge transfer efficiency of 99.9% which was not good enough
to be used for building a large scale DRAM chip. On the other hand, the
buried channel type CCD has a good charge transfer efficiency of 99.999%,
which was useful for building the analog signal charge transfer device(CTD).

Although the originally intended application of CCD was not the same as the
final application, CCD became the super star in the image sensor world.

However, CCD alone could not have the super star position.

CCD needed SONY HAD to become the super star in the image sensor world.

Now CMOS image sensor needs SONY HAD to become the super star.

Without Hagiwara invention of SONY HAD, CCD would have been useless .

CCD survived with the help of the SONY HAD, Hagiwara 1975 invention,
which is also the Buried Photodiode, the Depletion Photodiode with no
image lag and the PinnedPhotodiode with no dark current.

SONY HAD, the P+N-PNsub junction type Pinned Photodiode also has
the built-in vertical overflow drain function which CCD does not have.

Hagiwara at SONY in 1975 invented the P+N-PNsub junction type
Pinned Photodiode originally to provide the built-in vertical overflow
drain
(VOD) function and the low dark current features. CCD has
already had the low image lag feature. And nothing was new about
the low image lag feature when Hagiwara invented the the P+N-PNsub
junction type Pinned Photodiode. But Hagiwara also showed in the
Patent Figures that the P+N-PNsub junction type Pinned Photodiode
has
the low image lag features. Hagiwara at SONY in 1975 invented
the SONY HAD, the Pinned Photodiode, the Depletion Photodiode
and Buried Photodiode with the vertical overflow drain (VOD) function.
Hagiwara also invented the MOS Capacitor type Global Shutter function
which is needed for CMOS image sensors. Details will be explained.

The CCD type Charge Transfer Device(CTD) is now replaced by the
CMOS type Charge Transfer Device(CTD) and we no longer need CCD.
However, we still need SONY HAD, Hagiwara 1975 invention.

There are basically five types of photodiodes.

(1) N+Psub junction type Photodiode with serious image lag problem.

(2) PNPsub junction type Buried Photodiode.

(3) PN-Psub junction type Depletion Photodiode.

(4) P+N-Psub junction type Pinned Photodiode

(5) P+N-PNsub junction type Sony Hole Accumulation Diode (HAD)

Do you understand the important differences of these five photodiodes ?

Since the introduction of Passport Size SONY CCD Portable Video camera
in 1980s, the SONY HAD was used in the interline CCD image sensors all
over the world. And now the same super light sensitive SONY HAD is still
used in all of the modern High Resolution CMOS image sensors.

We no longer use CCD but we still need the SONY HAD to have the
super light sensitive, low noise, low dark current and low image lag
SONY HAD in all of the modern High Resolution CMOS image sensors.

This SONY HAD was invented by Yoshiaki Hagiwara at Sony in 1975.


Most of the designers of image sensors now are digital circuits and system
design engineers without strong semiconductor device physics background.


Hagiwara now wishes to explain the image sensor engineers
Basic Japanese Patents related to Pinned Photodiode invention.





SONY Image Sensors were developped by the experienced Bipolar Process Engineers

educated and guided by Kawana-san and Kato-san, who are the pioneering SONY

Bipolar Process engineers in 1950s and 1960s. Later, Iwama-san ( SONY President )

appointed Kawana-san and Kato-san as the top management leaders of SONY CCD

Image Sesnor Process Developments. Hagiwara later in 1975 joined SONY as the chief

design engineer of the CCD image sensors, and worked for Kawana-san and Kato-san.






Yamada at Toshiba in Japanese Patent 1978-1971 defined the surface photodiode type(A)
which is the simple NPNsub junction diode with the built-in vertical overflow drain (VOD).

Shirai and Teranishi at NEC in Japanese Patent 1980-123259 defined the Buried Photodiode
type(B) which is the simple PNPsub junction Depletion Photodiode with low image lag feature.

Hagiwara at Sony in Japanese Patent 1975-134985 defined the Buried, Depletion and Pinned
Photodiode, a combination of type(A) and type(B) photodiodes, which is the PNPNsub junction
(thyristor) type photodiode with low dark current and low image lag features with the vertical
oveflow drain (VOD) function. Since Hagiware already invented type(A) and type(B) photodiodes
in 1975, both Toshiba Patent 1978-1971 and NEC Patent 1980-123259 are late and invalid.




NEC 1980 patent does not have the P+ surface hole accumulation layer.

Hole reaching the surface has to migrate slowly to the adjacent channel
stop region. The hole movements are slow and random and may catch
the signal electrons to recombine again, resulting the poor quantum
efficiency. A very deep knowledge with physics background is needed
to understand semiconductor device behaviors in solid image sensors.


Fossum wrote a fake paper in 2014 insulting SONY HAD and Hagiwara.

Fossum became a big stupid liar due to his ignorance.


Obviously, Fossum never read the Japanese Patent Claims which

defined the P+NPNsub junction (thyristor) type Pinned Photodiode,

which is also the Depletion Photodiode and the Buried Photodiode

with the built-in vertical overflow drain (VOD) function since the

punch-thru operational mode of the P+NPNsub junction (thyristor)

was well known among the bipolar process and device engineers.



Fossum made the serious false statements deceiving the world, inviting also
the misjudgements of the Queen of U.K. and the Emperor of Japan.

Fossum claimed that Hagiwara never invented the Pinned Photodiode with
the low image lag features. But the Figures in Hagiwara 1975 patents clearly
showed that Hagiwara invented the Pinned Photodiode with the low image
lag features and with the built-in vertical overflow drain (VOD) function.



Peter Noble in 1966 invented the in-pixel AMP MOS image sensor,
which is the base of the modern CMOS image sensor..

Yoshiaki Hagiwara invented the P+NPNsub photodiode
which is the base of the Pinned Photodiode and SONY HAD.

We all knew that CMOS Process Scaling and Gordon Moore's Law.

Fossum did not invent the MOS Image sensor.
Teranishi did not invent the Pinned Photodiode.


Fossum was not fair, attacking Hagiwara 1975 patents on the
Pinned Photodiode with false statements in his 2014 paper.

Dilligent engineers all over the world including SONY engineers
developped the CCD and CMOS image sensors.

Fossum made the serious false statements deceiving the world,
and also inviting the misjudgements of the Queen of U.K. and
the Emperor of Japan.



Teranishi did not invent the Pinned Photodiode.

As Prof. Albert Theuwissen claimed in his 2006
paper, the Pinned Photodiode with the Pinned
Window and the Pinning Surface potential was
for the first time in the world reporeted in the
Hagiwara 1978 paper, which is based on the
Hagiwara 1975 Japanese Patent 1975-134985.

Obviously, 2017 QWPrize Winners had a wrong
person for the inventor of the Pinned Photodiode.




Tutorial for Image Sensor



Image sensor is made of two important parts.

(A) Charge Transfer Device (CTD)

(B) Pinned Photodiode


(A) One is the signal charge transfer device (CTD)
that transports the signal charge ( photo electrons )
to the output circuits such as the Cache SRAM, the
Nonvolatile RAM (NVRAM) and the processor unit.

In 1990s, the CCD type CTD was used widely. Now
the CMOS type CTD is used widely all over the world.


(B) And the other is the light detecting photodiode
that generates the signal electronic charge carriers
( photo electrons ) according to the incoming light.

This important photodiode is called Pinned Photodiode,
which is identical to SONY Hole Accumualtion Diode (HAD).




Please see the two reference 1977 and 1978 Hagiwara Papers.


Y. Daimon-Hagiwara, M. Abe, and C. Okada,"A 380H x 488V CCD
imager with narrow channel transfer gates,
" Proceedings of the 10th
Conference on Solid State Device, Tokyo, 1978; Japanese Journal
of Applied Physics, vol. 18, Supplement 18-1, pp.335-340, 1979.

Yoshiaki Daimon-Hagiwara, "Two Phase CCD with Narrow-Channel
Transfer Regions," Proceedings of the 9th Conference on Solid State
Device, Tokyo, 1977; Japanese Journal of Applied Physics, vol. 17,
Supplement 17-1, pp.225-261, 1978.


In these two paper, Hagiwara reported how to make the P+ surface

hole accumulation layer to form the P+NPsub junction type Pinned

Photodiode, which is later also called as SONY HAD sensor.

"Then, using the polysilicon patterning as an ion implantation mask,

boron ions with the dose level of 2 x 10(13) cm(-2) are implanted

into the silicon substrate throughout the exposed portions of the

thermally grown oxide."

Also see three Japanese Patents 1975-127646, 1975-127647 and
1975-134985 on the Buried Photodiode, the Depletion Photodiode
and the Pinned Photodiode with the vertical overflow drain (VOD).



The light detecting Pinned Photodiode is very important.

This photodiode must be super sensitive to the
incoming light with very low trap (1/f) noise, very
low dark current and very low image lag features.

Pinned Photodiode invented by Hagiwara at SONY
in 1975 has these important features.


The CMOS image sensor is the CMOS type Charge
Transfer Device (CTD) with Pinned Photodiode.

Pinned Photodiode invented in 1975 by Hagiwara was
used in Interline Transfer CCD image sensors in 1990s.

Now the Pinned Photodiode is used widely in modern
CMOS image sensors all over the world.








(A) There are three types of charge transfer device (CTD)


(A1) Classical MOS type Charge Transfer Device (CTD)
with large thermal (CkT) noise and clock noise.

(A2) CCD type Charge Transfer device(CTD) which was
the Super Star used in the digital vedio camera in 1990s.

(A3) Modern CMOS type Charge Transfer Device (CTD)
with in-pixell 3Tr source follower active appmlifier circuit.

We no longer need CCD type Charge Transfer Device (CTD).

CCD has a large power consumption and the limited charge
transfer efficicienty ( 99.999% ) which is not good enough
for the high definition 4K and 8K digital TV picture quality.





(B) Study the difference and common features of photosensors.


There are five basic photodiode structures..



(B1) N+P junction photodiode

with the feature of good blue light sensitivity
but with the problem of serious imag lag..



(B2) PNPsub junction type Buried Photodiode

with the feature of good blue light sensitivity.

Buried Photodiode is not by necessity Depletion Photodiode.

Buried Photodiode is not by necessity Pinned Photodiode.


(B3) PN-Psub junction type Depletion Photodiode

which is also Buried Photodiode with good blue sensitivy.

Depletion Photodiode has the good feature of no image lag.

Depletion Photodiode is not by necessity Pinned Photodiode.


(B4) P+N-Psub junction type Pinned Photodiode

which is also Buried Photodiode with good blue sensitivy,
which is also Depletion Photodide with no image lag problem.

Pinned photodiode has the P+ surface hole accumulation layer
with the good feature of no surface dark current.

(B5) P+N-PNsub junction type SONY Hole Accumulation Diode (HAD)
invented by Hagiwara at SONY in 1975 in Japanese Patent 1975-134985,

with in-pixell and built-in vertical overflow drain (VOD) function,
which is also Buried Photodiode with good blue sensitivy,
which is also Depletion Photodide with no image lag problem,
which is also Pinned Photodiode with no surface dark current.
















(1) What is the Buried Photodiode ???




(2) What is the Depletion Photodiode ???




(3) What is the Pinned Photodiode ???




(4) What is SONY HAD ( Hole Accumulation Diode ) sensor ????




Recommended Reference Book written by Yoshiaki Hagiwara  
      
The World of Artificial Intelligent Digital Cirucuits


Relatied Topics :

Study Special Relativity

Study Korean

Study Abura-waka-zan

Learn about SSIS

Learn about SSIS Tutorials




When Hagiwara was a PhD student at Caltech, in
Pasadena California USA, under the guidance of
Prof. Carver Mead, Hagiwara designed a Fast 128 bit
digital data stream parallel comparator chip, which
was fabricated at Intel with the Intel 1101 PMOS DRAM
process technology. Hagiwara learned the Intel vision on
the MOS process scaling rules which was later known as
Gordon Moore's MOS Scaling Rule as named by Prof. Mead.

We no longer need CCD image sensors because of the
CMOS Process Scaling advancement. We now have a
very good picture quality with the in-pixel 3 Tr source
follower active curcuit invented by Peter Noble in 1966
and the Pinned Photodiode invented by Yoshiaki Hagiwara
at SONY in 1975. See Japanese Patent 1975-134985.












Hagiwara invented the Pinned Photodiode in 1975.

******************************



https://www.jstage.jst.go.jp/article/tvtr/3/33/3_KJ00001962730/_article/-char/ja/






SONY developed the P+NP junction type Pinned Photodiode for the fisrt time
in the world in 1978 which was used in Frame Transfer CCD image sensor.

See Hagiwara 1978 the P+NP junction type Pinned Photodiode paper.

The original 1975 Japanese patents defined the P+NPNsub junction type
Pinned Photodiode used in Interline Transfer (ILT) CCD Image Sensor.

SONY already had the Thin Polysilicon Transparent Gate Electrode type
Interline Transfer (ITL) CCD Image Sensor on Production Line as shown
above. SONY efforts were focused on the built-in vertical overflow drain
(VOD) with the P+ surface hole accumulation type Pinned Photodiode, as
originally invented by Hagiwara at Sony in 1975 in his three Japanese Patents,
1975-127646, 1975-127647 and 1975-134985.




Pinned_Photodiode_1978_Paper_by_Hagiwara.pdf

https://www.jstage.jst.go.jp/article/tvtr/4/41/4_KJ00001963301/_article/-char/ja/


Pinned_Photodiode_and_SONY_HAD_Sensor_invented_by_Hagiwara.pdf


Hagiwara is the inventor of the P+NPsub junction type Pinned Photodiode.

See the Hagiwara 1978 paper shown below, published in the International
Semicondutor Device Conference held in Tokyo in 1978 .



The importance of the surface P+ hole accumulation lay of the Pinned Photodiode
was reported in this Hagiwara 1978 paper at the International Semicondoctor Device
Conference held in Tokyo. Pinned_Photodiode_1978_Paper_by_Hagiwara.pdf

https://www.jstage.jst.go.jp/article/tvtr/4/41/4_KJ00001963301/_article/-char/ja/





Hagiwara explained that the P+NPsub junction type Pinned Photodiode

has very low surface dark current and very exellent blue light sensitivity.







Yoshiaki Hagiwara was invited in the following five international
conferences because of his contributions to the image sensor
community and related digital system LSI chip design works.

See the five invited talks related to the Pinned Photo Diode
which is also called as SONY original Hole Accumulation
Diode (HAD) image sensor.

(1) International Conference CCD79 in Edinburgh, Scotland UK

See https://www.imagesensors.org/Past%20Workshops/1979%20CCD79/03-1%20Hagiwara.pdf

(2) International Conference ESSCIRC2001 in Vilach, Austria.

See http://www.aiplab.com/ESSCIRC2001.pdf

(3) International Conference ESSCIRC2008 in Edinburgh, Scotland UK

See http://www.aiplab.com/0-ESSCIRC2008Hagiwara.pdf

(4) International Conference ISSCC2013 in San Francisco, California USA

See http://www.aiplab.com/ ISSCC2013PanelTalk.pdf

(5) IEEE Computer Society Coolchips2017 Conference at Yokohama, Japan


See http://www.coolchips.org/2017/?page_id=10#panel


Related Works by Hagiwara

(1) Pinned Photo Diode (P+NP) and SONY HAD
(P+NPNsub) are the same thing. Both were invented
by Hagiwara at Sony in 1975 in the Japanese Patents

See http://www.aiplab.com/Pinned_Photo_Diode_1975_invented_by_Hagiwara.pdf

(2) For MOS CTG Global Shutter Memory and Back Light Illumination
PP-NP+N-N+ junction Pinned Photodiode Patent ,
see http://www.aiplab.com/JP1975-127646.pdf

Hagiwara is the inventor of the Buried Photodiode.

See the Japanese Patent 1975-127646 shown below.



(3) For MOS CTG Global Shutter Memory and Back Light Illumination
NP+N-N+ junction Pinned Photodiode Patent,
see http://www.aiplab.com/JP1975-127647.pdf

Hagiwara is the inventor of the Depletion Photodiode,

with no image lag. See the empty potential well drawn in

Fig. 7 of the Japanese Patent 1975-127647 shown below.



(4) For the built-in Vertical Overflow Drain (VOD) function type
P+NPNsub junction Pinned Photodiode Patent,
see http://www.aiplab.com/JP1975-134985.pdf


Hagiwara is the inventor of the Pinned Photodiode,

with low surface dark current and with the vertical

overflow drain (VOD) function. Read the patent claims

described exactly in the Japanese Patent 1975-134985.







Please note that Toshiba 1978 VOD Patent is INVALID, which is a duplicate
of Hagiwara 1975 invention Patent (1975-134985) as explained above.

Please note that NEC 1980 Buried Photodiode Patent is also INVALID,
which is a duplicate of Hagiwara 1975 invention Patent (1975-134985).




NEC 1980 patent does not have the P+ surface hole accumulation layer.

Hole reaching the surface has to migrate slowly to the adjacent channel
stop region. The hole movements are slow and random and may catch
the signal electrons to recombine again, resulting the poor quantum
efficiency. A very deep knowledge with physics background is needed
to understand semiconductor device behaviors in solid image sensors.


(5) When Hagiwara was a PhD student at Caltech, in
Pasadena California USA, under the guidance of
Prof. Carver Mead, Hagiwara
designed a Fast 128 bit
digital data stream parallel comparator chip, which
was fabricated at Intel with the Intel 1101 PMOS DRAM
process technology. Hagiwara learned the Intel vision on
the MOS process scaling rules which was later known as
Gordon Moore's MOS Scaling Rule as named by Prof. Mead.

We no longer need CCD image sensors because of the
CMOS Process Scaling advancement. We now have a
very good picture quality with the in-pixel 3 Tr source
follower active curcuit invented by Peter Noble in 1966
and the Pinned Photodiode invented by Yoshiaki Hagiwara
at SONY in 1975. See Japanese Patent 1975-134985.




See http://www.aiplab.com/128_bit_Comparator.pdf

(6) Hagiwara designed a Fast 25 nanosecond access time
4 M bit Cache SRAM chip for digital camera applications.
Intel used the SONY SRAM chips in the Intel boards.
Sony enjoyed SRAM business while many semiconductor
companies in Japan were focusing on the 4 M bit DRAM
chip business.


See http://www.aiplab.com/SONY_4MSRAM_1989.pdf







SONY Claims in the SONY and NEC Secret Patent War on SONY HAD patent.

SONY and KODAK made final political agreements favoring
SONY after the Pinned Photodiode Secrete Patent War.

Fuji-Sankei News Paper reported the details on Jan 4, 2007.



SONY won the Fairchild-SONY patent war on Pinned Photodiode.



Finally SONY won the Fairchild SONY patent war in 2001 after
more than 10 years of struggle on Hagiwara1975 patent on the
Pinned Photodiode with the vertical overflow drain (VOD) function,
which is identical to SONY Hole Accumulation Diode (SONY HAD).



E-mail Communication with Dr. Toshiyuki Yamada, the director of
the SONY Yokohama Central Reaserch Laboratory on Fairchild Patent War










Hagiwara also received SONY Cyrystal Award for his analytic work
on the image sensor MTF and picture aliaing effect calculations.



Hagiwara contributed a lot for SONY image sensor business but
Hagiwara was not well treated and his achievements were stolen
by his boss ( Ochi-san ) . Ochi-san also received his PhD degree
using Hagiwara's research works on the time (t) and space ( x and y )
MTF and aliasing effect analysis of imaging picture quality in 1970s
at SONY Yokohama Research Center. In his PhD paper, Ochi-san
never quoted Hagiwara research works.

Ochi-san also wrote a book on the image sensor but never made
any comments to acknowledg Hagiwara's contributions on the Fairchild
and SONY patent war on the SONY Hole Accumulaton Diode (HAD).

Ochi-san did not explain that SONY HAD was Hagiwara invention.
Not many people in SONY knew that SONY HAD is Hagiwara invention.




Prof. Albert Theuwissen claims that Hagiwara 1975 patents and
Hagiwara 1978 paper are the evidence that Hagiwara at SONY
is the true inventor of the Buried, Depletion and Pinned Photodiode,
which is also identical to SONY Hole Accumulation Diode (HAD).

E-mail communication with Prof. Albert Theuwissen at Delft Univ.



Prof. Albert Theuwissen said, at the workshop on CMOS imaging

in Duisburg on May 16, 2006 , "The P+NPsub jucntion Pinned

Photodiode reported in Hagiwara 1978 paper is the Mother of

the NEC Buried Photodiode ( reported at IEDM1982 ) and the

KODAK Pinned Photodiode ( reported at IDM1984 ) and SONY

Hole Accumulation Diode (HAD) sensor."



The public WEB shown below claims that Hagiwara 1975 patents
and Hagiwara 1978 paper are the evidence to claim that Hagiwara
is the inventor of Buried, Depletion and Pinned Photodiode.



The fisrt Pinned Photodiode was invented by Hagiwara at Sony.

See the Hagiwara 1975 patents ( 1975-127646, 1975-127647
and 1975-134985 ) and his 1978 paper on P+NPsub junction
type Pinned Photodiode used in the Frame Transfer CCD.

The first Pinned Photodiode is used in Interline Transfer CCD as
described in Hagiwara Japanese Patent 1975-134985 and used as
SONY HAD and now is also used in modern CMOS image sensors.

It has long been incorrcetly attributed to Teranshi ( instead of
Hagiwara ) in ILT CCD image sensors, and to Fossum ( instead
of Peter Noble ) in the in-pixel active CMOS image sensors.

It is important to correct a historical error and misreporting.

Attribution is very important.



Hagiwara invented the in-pixell Global Shutter scheme in his

1975 Japanese Patents ( 1975-127646 and 1975-127647 )




SONY and Hagiwara still receive Unfair Patent Attacks.



The Hagiwara invented the Pinned Photodiode with no image lag.

The following figures shown in his 1975 are the evidence that
Fossum is a big liar and an international shameful thief in the
sacrid Image Sensor Conmmunity.

I strongly request Fossum, because of his false statements
and ignorance, his public apology to SONY and Hagiwara .


A very deep knowledge with physics background is needed to understand
the small world of semiconductor device behaviors in solid image sensors.

Most of the designers of image sensors now are digital circuits and system
design engineers without strong semiconductor device physics background.










Prof. Kagami explained that SONY HAD, Pinned Photodiode and
Buried Photodiode are the same thing. Yes, they have the common
Buried Photodiode structure. But the Buried Photodiode is not
by necessity Depletion Photodiode with no image lag. And the
Depletion Photodiode is not by necessity Pinned Photodiode which
has the P+ hole accumulation surface layer with no surface dark
current, which is SONY hole accumulation diode (HAD) itself.

Yes, SONY HAD and Pinned Photodiode are identical. AND SONY
HAD and Pinned Photodiode are Buried Photodiode as Prof. Kagami
said. However, the Buried Photodiode, Depletion Photodiode and
Pinned Photodiode were invented by Hagiwara at SONY in 1975.

The evidence is given in Japanese patents filed by Hagiwara in 1975.

See 1975-127646, 1975-127647 and 1975-134985.





Fossum was invited to make a keynote speech on the Buried
Photodiode with no image lag. He said the Buried Photodiode
was invented by Teranishi at NEC in 1980. However, it is not
true.
Fossum never read and understood the three Japanese
patents file by Hagiwara in 1975
, which is the basic patents
on the Buried Photodiode, the Depletion Photodiode and
the Pinned Photodiode patents by Hagiwara at SONY in 1975.

Fossum is a liar making false statements and insulting SONY
and Hagiwara 1975 inventions on the Pinned Photodidode.

I strongly request Fossum, because of his false statements
and ignorance, his public apology to SONY and Hagiwara .





The official WEB site of the Japanese Invention Office has
the patent citation claims which contradict the true facts (??).











**********************







.


Panel Talk 2009 on Artificial Intelligent Partner System (AIPS) after SONY PS3/PS4.



SONY Image Sensors were developped by the experienced Bipolar Process Engineers

educated and guided by Kawana-san and Kato-san, who are the pioneering SONY

Bipolar Process engineers in 1950s and 1960s. Later, Iwama-san ( SONY President )

appointed Kawana-san and Kato-san as the top management leaders of SONY CCD

Image Sesnor Process Developments. Hagiwara later in 1975 joined SONY as the chief

design engineer of the CCD image sensors, and worked for Kawana-san and Kato-san.







Hagiwara was on Japanese Television ( Fuji TV ) , March 2013 ,
explaining his vision on the future self-driving automatic car
controlled by with the artificial intelligent partner system (AIPS).




Hagiwara_Yoshiaki_CaltechDiploma_PhD1975.pdf




**********************
The AIPS image sensor watching at its inventor, Yoshiaki Hagiwara.
          return to the TOP Page
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