Papers related to the invention and the development efforts of Pinned Buried Photodiode.
(A) The evidence that Hagiwara at Sony invented the NPN variant of Pinned Photodiode (PPD)
with the global shutter function is given by the Japanese patent applications,
JPA1975-127646[A1] and JPA1975-127647[A2]
The evidence that Hagiwara at Sony invented the PNP type Pinned Photodiode (PPD)
with the in-pixel vertical overflow drain (VOD) anti-blooming structure is given by
the Japanese patent applications, JPA1975-134985[A3]
(B) The evidence that Hagiwara at Sony developed the first PNP type PPD used in a delay line
is given by the SSDM1977 paper [B1] and used in the FT CCD area sensor given by the SSDM1978 paper [B2]
Just for your information and for your further understandings
(C) Hagiwara was invited at many international technical conference for his works.
And presented eight invited conference papers, [C1] thru [C8].
(D) Recently Hagiwara presented five papers, [D1] thru[D5] to explain the details of
the 1975 invention and the 1978 development effort of Pinned Photodiode for
the English speaking IEEE community for the first time.
(E) Hagiwara also contributed papers [E1] thru [E6] related to his invention and development efforts.
The information below is a list of publications with the link to the PDF files.
[A1] See Fig. 6 of JPA197-127646 on the triple junction N+NPNP variant of PPD with no image lag problem by the PNP junction type punch-thru action also with Global Shutter Structure with the pinned N+N surface with the surface N+N induced barrier electric field, enhancing the surface photo electron and hole separations for the short-wave blue light sensitivity to realize the super light sensitive video cameras.
[A2] See Fig. 6 of JPA197-127647 on the triple junction N+NPN variant of PPD with no image lag problem by the PN junction type punch-thru action also with Global Shutter Structure with the pinned N+N surface with the surface N+N induced barrier electric field, enhancing the surface photo electron and hole separations for the short-wave blue light sensitivity to realize the super light sensitive video cameras.
[A3] See fig. 6 of JPA1975-134985 which defined the PNP junction type pinned photodiode with the PN collector junction used for the photo electron and hole pair separation at the pinned p surface and with the NP emitter junction used the anti-blooming diode structure.
[B1] The evidence that Hagiwara developed the first PNP type Pinned Photodiode as a delay line with complete charge transfer is given by Sony in SSDM1977 paper for the first time in the world.
Y. Daimon-Hagiwara Proc. 9 th Conf. on Solid-State Devices, Tokyo, 1977, pp.335-340,
[B2] The evidence that Hagiwara developed the first PNP type Pinned Photodiode is given by Sony in SSDM1978 paper with no image lag problem reported PPD used in FT CCD for the first time in the world.
Y. Daimon-Hagiwara et.al., Proc. 10th Conf. on Solid-State Devices, Tokyo, 1978, pp.335-340,
[C1] Invited Paper at the CCD79 conference in Edinburgh, Scotland UK
[C2] Invited Paper at the ECS1980 conference at St. Luis USA
[C3] Invited Paper at the ESSCIRC2001 Conference at Vilach, Autria
[C4] Invited Tutorial Talk at the IEDM2004 Conference at San Francisco, USA
[C5] Invited Paper at the ESSCIRC2008 Conference at Edinburgh, Scotland, UK
[C6] Invited Paper at the ICD2008 Conference in Tokyo, Japan on Dec 12, 2008
[C7] Invited Paper at the Cool Chips Conference at Yokohama, Japan
[C8] Invited Plenary Panel Talk in ISSCC2013 conference, San Francisco, USA
[D1] P2019_3DIC2019 Conference Paper on "Multichip CMOS Image Sensor Structure for Flash Image Acquisition"
[D2] P2020_EDTM2020 Conference Paper on "Simulation and Device Characterization of the P+PN+P Junction Type Pinned Photodiode and Schottky Barrier Photodiode "
[D3] P2021_IJSSA2021_e-Journal Paper on "Electrostatic and Dynamic Analysis of P+PNP Double Junction Type and P+PNPN Triple Junction Type Pinned Photodiodes"
[D4] ICECET2021_Conference_Paper061 on "Pinned Buried PIN Photodiode Type Solar Cell"
[D5] ICECET2021_Conference_Paper075 on "Invention and Historical Development Efforts of Pinned Buried Photodiode "
With these published papers, I really wish to help editors understand my invention
and my development efforts so that I would have their kind supports.
See also Sony Public Home Page on June 26, 2020, in which
Sony publically explained that
Hagiawra at Sony invented Pinned Buried Photodiode
with in-pixel VOD function in 1975
See also Japan Semiconductor Expert Society History Museum Home Page
which also supports that
Hagiwara at Sony invented the first Pinned Photodiode in 1975
and that Hagiwara developed in 1978 and reported
at the SSDM1978 conference at Tokyo
the first and original Pinned Photodiode.
(1)Japanese Patent Application JPA1975-127646
(2)Japanese Patent ApplicationJPA1975-127647
(3)Japanese Patent ApplicationJPA1975-134985
(4)Japanese Patent Application JPA1977-126885
(5)SSDM1978 Conference Paper
Recent Publications on Pinned Photodiode by Hagiwara
(6)P2019_3DIC2019 Conference Paper
(7)P2020_EDTM2020 Conference Paper
Yoshiaki Hagiwara at Sony invented Pinned_Photodiode on March 5, 1975
Please write me freely at firstname.lastname@example.org
The presentation slides, pdf, mp3 audio and mp4 video files
of my papers 061 and 075 are now all uploaded into:
held at the IEEE ICECET2021 conference
in Cape Town, South Afrrica on Dec 9 and 10, 2021.
001A_ICECET2021_Paper061_Pinned Buried PIN Photodiode type Solar Cell.pdf
002A_ICECET2021_Paper075_Invention and Historical Development Efforts of Pinned Buried Photodiode.pdf
002C_ICECET 2021 PARTICIPATION CERTIFICATE_075.pdf
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