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hagiwara-yoshiaki@aiplab.com ( http://www.aiplab.com/ )

hagiwara@ssis.or.jp ( http://www.ssis.or.jp/en/index.html )

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****************************************************************
Important Japanese Patents on Pinned Photodiode
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(1) Japan Patent Application 1975-127646 on the back light illumination mode

N+NP+NP Pinned Photodiode with MOS Buffer memory for Global Shutter.


(2)Japan Patent Application 1975-127647 on the back light illumination mode

N+NP+N Pinned Photodiode with MOS Buffer memory for Global Shutter.

(3)Japan Patent Application 1975-134985 on P+NPNsub Pinned Photodiode

with the vertical overflow drain (VOD) function for Electrical Shutter.

(4) Japan Patent Application 1977-126885 on Electric Shutter Clock Scheme

for the image lag free dynamic photo capacitor and dyanamic photo transistor

of the 1975 P+NPNsub Pinned Photodiode with the vertical overflow drain (VOD).
.


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(1) Japan Patent Application 1975-127646 on the back light illumination mode

N+NP+NP Pinned Photodiode with MOS Buffer memory for Global Shutter

http://www.aiplab.com/JP1975-127646_A.jpg



(2)Japan Patent Application 1975-127647 on the back light illumination mode

N+NP+N Pinned Photodiode with MOS Buffer memory for Global Shutter

http://www.aiplab.com/image14.jpg



(3)Japan Patent Application 1975-134985 on P+NPNsub Pinned Photodiode

with the vertical overflow drain (VOD) function for Electrical Shutter.







(4) Japan Patent Application 1977-126885 on Electric Shutter Clock Scheme

for the image lag free dynamic photo capacitor and dyanamic photo transistor

of the 1975 P+NPNsub Pinned Photodiode with the vertical overflow drain (VOD).
.

http://www.aiplab.com/JP1977-126885_Ganma_and_Electric_Shutter_Clocking.pdf

http://www.aiplab.com/Sony_patent_Award_on_Electric_Shutter_HAD.jpg




http://www.aiplab.com/image17.jpg




One invention was perfected by the ideas and efforts of
many diligent engineers and scientists. I worked for
image sensors in Sony only from 1975 till 1980. Then
I focused my attention to develop the digital camera
system LSI chips which was my life work in Sony.
I had a very wonderful time in Sony with many friends
working together with me, and still enjoying working for
future vision system chips for AI IoT Robotics world.

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https://electronics.stackexchange.com/questions/83018/difference-between-buried-photodiode-and-pinned-photodiode



I have the basic patent JPA 1977-128885 on the electrical shutter function
on the dynamic PNPN junction type photodiode which, as you know, later
became the basis of the PNP jucntion NEC and Kodak Pinned Photodiode
and the NPNP jucntion Sony Hole Accumulation Diode (HAD).

http://www.aiplab.com/Sony_patent_Award_on_Electric_Shutter_HAD.jpg

I was awarded internally in Sony by Idei san, Sony President and CEO,
for the invention of the Sony Hole Accumulation Diode with the vertical
overflow drain (VOD) function scheme for the 1977-128885 Japanese Patent.

These old patents of mine ( JP1975-124676, JP1975-127647, JP1975-134985
and JP1977-128885 ) were all written in Japanese and were never disclosed
to the international world in details and causing many misunderstandings.

At that time in 1970s, we never thought the importance of patent files.
We were very busy to build a good image sensor for our customer market.
It was all my fault that I never explained these important ideas of mine
in details in the international English Journal and publications.

But I strongly believe that I invented the dynamic photo transistor
with the excellent light sensitivity, the extremely low surface dark current,
the extreme low image lag, the in pixel overflow drain(VOD), and the in pixel
MOS buffer memory for the Global shutter operation which is essential
for modern CMOS image sensors. In 1975, I also had the idea of the back
light illumination scheme for the dynamic photo transistor which is very
promising for building the three dimensional (3D) multi stacked integration
for a high performance real time robot vision system.

http://www.aiplab.com/P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf

http://www.aiplab.com/P2020_EDTM2020_PaperID_3C4_by_Hagiwara.pdf


I believe my inventions served as the initiator to accelerate Sony, Kodak and
other companies to build the digital camera and change the world from the
analog life style of film media to the new digital life style for AI IoT Robotics
for the future.



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The following WEB site explains very well what is Pinned Photodiode.

https://en.wikipedia.org/wiki/Photodiode#Pinned_photodiode

This Pinned Photodiode is based on the PNP dynamic photo transistor structure
that Hagiwara proposed in 1975 in his Japanese Patent 1975-134985, 1975-127646,
and 1975-127647.

This fact is not widely known in the international world.

The PNP dynamic photo transistor structure was published
for the first time in the world in my SSDNM1978 paper.





Hole Accumulation Diode is a PNPN junction type Dynamic Photo Transistor
which is Hagiwara 1975 invention of a Pinned Photodiode (PPD) with the
vertical overflow drain (VOD) structure.

Please note that the static photo transistor was invented already in 1950s.

http://www.aiplab.com/image19.jpg

But as you know, the dynamic ITIC DRAM changed the world.


The dynamic photo transistor I proposed in JPA 1975-134985
became now the basic of the NEC 1982 Buried Photodiode,
the Kodak 1984 Pinned Photodiode and the Sony 1987 HAD.

https://www.shmj.or.jp/english/pdf/dis/exhibi1005E.pdf


http://www.aiplab.com/image17.jpg

http://www.aiplab.com/image7.jpg

http://www.aiplab.com/NPNP_junction_Pinned_Photodiode_in_1975_by_Hagiwara.jpg

https://en.wikipedia.org/wiki/Photodiode#Pinned_photodiode

This Pinned Photodiode is based on the PNP dynamic photo transistor structure
that Hagiwara proposed in 1975 in his Japanese Patent 1975-134985, 1975-127646,
and 1975-127647.

This fact is not widely known in the international world.

The PNP dynamic photo transistor structure was published
for the first time in the world in my SSDNM1978 paper.





Hole Accumulation Diode is a PNPN junction type Dynamic Photo Transistor
which is Hagiwara 1975 invention of a Pinned Photodiode (PPD) with the
vertical overflow drain (VOD) structure.

Please note that the static photo transistor was invented already in 1950s.

http://www.aiplab.com/image19.jpg

But as you know, the dynamic ITIC DRAM changed the world.


The dynamic photo transistor I proposed in JPA 1975-134985
became now the basic of the NEC 1982 Buried Photodiode,
the Kodak 1984 Pinned Photodiode and the Sony 1987 HAD.

https://www.shmj.or.jp/english/pdf/dis/exhibi1005E.pdf


http://www.aiplab.com/image17.jpg

http://www.aiplab.com/image7.jpg

http://www.aiplab.com/NPNP_junction_Pinned_Photodiode_in_1975_by_Hagiwara.jpg
















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https://www.shmj.or.jp/english/index.html

https://www.shmj.or.jp/english/pdf/dis/exhibi1005E.pdf







PS3_Cell_Proceesor_Sony_Team_Award

https://ieeexplore.ieee.org/document/4681786

Invited Talk at ESSCIRC2008



ISSCC2003_Executive_Committee_Contribution_Award












++++++++++++++++++++++++++++++++++++++++++++++++

My achievement can be summarize as

the contribution to the AI IoT Robotics world
thru the invention and the development efforts
of all solid state intelligent electric eye and
the technical contribution in the SONY SOI cell
processor development.

++++++++++++++++++++++++++++++++++++++++++++++++

the following documents may explain my life work.

https://www.imagesensors.org/Past%20Workshops/1979%20CCD79/03-1%20Hagiwara.pdf

http://www.aiplab.com/P1989_SONY_4MSRAM_1989.pdf

http://www.aiplab.com/P2001_ESSCIRC2001.pdf

http://www.aiplab.com/P2008_ESSCIRC2008Hagiwara.pdf

http://www.aiplab.com/P2013_ISSCC2013PanelTalk.pdf

http://www.aiplab.com/P2019_3DIC2019Paper_on_3D_Pinned_Photodiode.pdf

http://www.aiplab.com/P2020_EDTM2020_PaperID_3C4_by_Hagiwara.pdf


The followings are images of my life work

http://www.aiplab.com/P1976_128_bit_Comparator.jpg

http://www.aiplab.com/image25.jpg

http://www.aiplab.com/image14.jpg

http://www.aiplab.com/HanoiTower.jpg

http://www.aiplab.com/CoffeeCup.jpg

http://www.aiplab.com/image.jpg



++++++++++++++++++++++++++++++++++++++++++++++++

My achievement can be summarize as

the contribution to the AI IoT Robotics world
thru the invention and the development efforts
of all solid state intelligent electric eye and
the technical contribution in the SONY SOI cell
processor development.

++++++++++++++++++++++++++++++++++++++++++++++++








*********************************************************

http://www.aiplab.com/index1_List_of_Books_and_Journal_Publication.html

http://www.aiplab.com/index2_Conference_Publication.html

http://www.aiplab.com/index3_International_Contributions_and_Awards.html

http://www.aiplab.com/index4_Important_Japanese_Patents.html

http://www.aiplab.com/index5_My_Work_Summary.html


http://www.aiplab.com/index6_Important_Publication_and_Patent_Works.html

*********************************************************


*********************************************************

hagiwara-yoshiaki@aiplab.com ( http://www.aiplab.com/ )

hagiwara@ssis.or.jp ( http://www.ssis.or.jp/en/index.html )

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